JPS6032343A - パワ−半導体モジユ−ル基板 - Google Patents
パワ−半導体モジユ−ル基板Info
- Publication number
- JPS6032343A JPS6032343A JP14131983A JP14131983A JPS6032343A JP S6032343 A JPS6032343 A JP S6032343A JP 14131983 A JP14131983 A JP 14131983A JP 14131983 A JP14131983 A JP 14131983A JP S6032343 A JPS6032343 A JP S6032343A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- power semiconductor
- semiconductor module
- module substrate
- board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 title claims abstract description 16
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 25
- 239000000956 alloy Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims description 53
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 abstract description 13
- 238000010438 heat treatment Methods 0.000 abstract description 12
- 239000011888 foil Substances 0.000 abstract description 3
- 229910021074 Pd—Si Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 16
- 239000004020 conductor Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910001295 No alloy Inorganic materials 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910017945 Cu—Ti Inorganic materials 0.000 description 2
- 229910002065 alloy metal Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0104—Zirconium [Zr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Ceramic Products (AREA)
- Die Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14131983A JPS6032343A (ja) | 1983-08-02 | 1983-08-02 | パワ−半導体モジユ−ル基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14131983A JPS6032343A (ja) | 1983-08-02 | 1983-08-02 | パワ−半導体モジユ−ル基板 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6300702A Division JP2519402B2 (ja) | 1994-12-05 | 1994-12-05 | パワ―半導体モジュ―ル基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6032343A true JPS6032343A (ja) | 1985-02-19 |
| JPH0586662B2 JPH0586662B2 (en]) | 1993-12-13 |
Family
ID=15289145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14131983A Granted JPS6032343A (ja) | 1983-08-02 | 1983-08-02 | パワ−半導体モジユ−ル基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6032343A (en]) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6342153A (ja) * | 1986-08-07 | 1988-02-23 | Showa Denko Kk | 混成集積回路基板及びその製造方法 |
| JPS6342152A (ja) * | 1986-08-07 | 1988-02-23 | Showa Denko Kk | 混成集積回路基板及びその製造方法 |
| EP0190820A3 (en) * | 1985-02-01 | 1988-08-10 | Tektronix, Inc. | Zirconium thin-film metal conductor systems |
| US4919731A (en) * | 1987-02-10 | 1990-04-24 | Kabushiki Kaisha Toshiba | Brazing paste |
| JPH0497966A (ja) * | 1990-08-09 | 1992-03-30 | Ngk Spark Plug Co Ltd | セラミック摺動部品の製造方法 |
| US5176309A (en) * | 1990-05-25 | 1993-01-05 | Kabushiki Kaisha Toshiba | Method of manufacturing circuit board |
| EP0788153A2 (en) | 1996-02-05 | 1997-08-06 | Sumitomo Electric Industries, Ltd. | Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same |
| JP2000086368A (ja) * | 1998-09-16 | 2000-03-28 | Fuji Electric Co Ltd | 窒化物セラミックス基板 |
| JP2000335983A (ja) * | 1999-05-28 | 2000-12-05 | Denki Kagaku Kogyo Kk | 接合体の製造方法 |
| US6261703B1 (en) | 1997-05-26 | 2001-07-17 | Sumitomo Electric Industries, Ltd. | Copper circuit junction substrate and method of producing the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5175972A (en) * | 1974-12-26 | 1976-06-30 | Ngk Insulators Ltd | Seramitsukuno metaraijinguhoho |
| JPS53102310A (en) * | 1977-02-18 | 1978-09-06 | Tokyo Shibaura Electric Co | Heat conducting base plates |
| JPS56163093A (en) * | 1980-04-21 | 1981-12-15 | Bbc Brown Boveri & Cie | Activated wax and manufacture of thin sheet consisting of said wax |
| JPS5848926A (ja) * | 1981-09-18 | 1983-03-23 | Hitachi Ltd | 絶縁型半導体装置 |
-
1983
- 1983-08-02 JP JP14131983A patent/JPS6032343A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5175972A (en) * | 1974-12-26 | 1976-06-30 | Ngk Insulators Ltd | Seramitsukuno metaraijinguhoho |
| JPS53102310A (en) * | 1977-02-18 | 1978-09-06 | Tokyo Shibaura Electric Co | Heat conducting base plates |
| JPS56163093A (en) * | 1980-04-21 | 1981-12-15 | Bbc Brown Boveri & Cie | Activated wax and manufacture of thin sheet consisting of said wax |
| JPS5848926A (ja) * | 1981-09-18 | 1983-03-23 | Hitachi Ltd | 絶縁型半導体装置 |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0190820A3 (en) * | 1985-02-01 | 1988-08-10 | Tektronix, Inc. | Zirconium thin-film metal conductor systems |
| JPS6342153A (ja) * | 1986-08-07 | 1988-02-23 | Showa Denko Kk | 混成集積回路基板及びその製造方法 |
| JPS6342152A (ja) * | 1986-08-07 | 1988-02-23 | Showa Denko Kk | 混成集積回路基板及びその製造方法 |
| US4919731A (en) * | 1987-02-10 | 1990-04-24 | Kabushiki Kaisha Toshiba | Brazing paste |
| US5280850A (en) * | 1990-05-25 | 1994-01-25 | Kabushiki Kaisha Toshiba | Method of manufacturing circuit board |
| US5176309A (en) * | 1990-05-25 | 1993-01-05 | Kabushiki Kaisha Toshiba | Method of manufacturing circuit board |
| DE4117004B4 (de) * | 1990-05-25 | 2005-08-11 | Kabushiki Kaisha Toshiba, Kawasaki | Verfahren zur Herstellung einer Schaltungsplatte |
| JPH0497966A (ja) * | 1990-08-09 | 1992-03-30 | Ngk Spark Plug Co Ltd | セラミック摺動部品の製造方法 |
| EP0788153A2 (en) | 1996-02-05 | 1997-08-06 | Sumitomo Electric Industries, Ltd. | Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same |
| US5998043A (en) * | 1996-02-05 | 1999-12-07 | Sumitomo Electric Industries, Ltd. | Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same |
| US6261703B1 (en) | 1997-05-26 | 2001-07-17 | Sumitomo Electric Industries, Ltd. | Copper circuit junction substrate and method of producing the same |
| JP2000086368A (ja) * | 1998-09-16 | 2000-03-28 | Fuji Electric Co Ltd | 窒化物セラミックス基板 |
| JP2000335983A (ja) * | 1999-05-28 | 2000-12-05 | Denki Kagaku Kogyo Kk | 接合体の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0586662B2 (en]) | 1993-12-13 |
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